Innovative chalcogenide thin film technologies for indoor photovoltaics (InnoPV)
InnoPV aims to demonstrate and develop a new generation of cost-efficient, robust and stable PV devices specially designed for indoor applications, based on wide band gap thin film chalcogenide technologies, proposing and demonstrating optimal device architectures well adapted to the indoor illumination conditions. The project will exploit the high efficiency, high stability and low cost potential of chalcogenide semiconductors, together with their band gap tuneability and high degree of technological flexibility, to develop devices with optimal band gap energies (in the range 1.4 – 2.3 eV) and absorption properties well-adapted to the different spectra of artificial lights. This will allow the development of PV harvesters especially designed for indoor applications eliminating the need for the use of batteries.
El Proyecto InnoPV (PID2022-140226OB-C31) está financiado por MCIN/AEI/10.13039/501100011033/ FEDER, UE.
