Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

Fontsere, A.; Perez-Tomas, A.; Placidi, M.; Baron, N.; Chenot, S.; Moreno, J.C.; Rennesson, S.; Cordier, Y. "Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire" Applied Physics Letters 102, 9, pp. - 2013 DOI: 10.1063/1.4794411